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Tanaka, Nobuyuki
Maku, 47(4), p.197 - 201, 2022/07
A thermochemical water-splitting iodine-sulfur process enables us to provide the Carbon-free hydrogen (H
) at high-efficiency levels, and it uses high-temperature heat sources, including high-temperature gas-cooled reactors, solar heat, and more. The cation exchange membranes (CEMs) for the HI mediated electro electrodialysis (EED) were developed using a radiation grafted polymerization method in order to improve the process efficiency of the IS process. High proton (H
) conductivity and selectivity are required for the performance of CEMs to reduce the consumption energy for EED. The H conductivity of the radiation grafted CEMs were successfully improved by controlling the grafting amount, comparing with that of Nafion. Moreover, the H selectivity and water transport of the developed CEMs was improved by introducing the crosslinker. Currently, the further improvement of the membrane performance is underway by using the ion-track grafting technic.
Yoshigoe, Akitaka
Oyo Butsuri Gakaki Hakumaku, Hyomen Butsuri Bunkakai Newsletter, (168), p.52 - 53, 2019/09
When I become a permanent secretary of the Thin Film and Surface Physics Subcommittee of the Japan Society of Applied Physics, I use Newsletter to introduce a part of my research.
Nishida, Akemi
Nihon Kenchiku Gakkai Shimpojiumu "Kenchikubutsu O Torimaku Shogeki Mondai, Jinsai (shototsu, Bakuhatsu), Tensai (Tsunami, Tatsumaki), Tero Eno Sonae", p.7 - 22, 2015/12
The guideline for impulsive load as explosion and impact is not specified yet in architectural field. This presentation corresponds to the contents of the book titled "Introduction to Shock-Resistant Design of Buildings" which made towards the impact design guideline. Some design criteria examples are presented to illustrate the applicability of the tentative guideline for impulsive loads. Two buildings - a steel frame and a reinforced concrete frame building structures are selected. The idea has been shown in this presentation are those that can be applied to nuclear facilities.
Takeda, Masayasu
Hakumaku No Hyoka Gijutsu Handobukku, p.51 - 53, 2013/01
no abstracts in English
Takeda, Masayasu
Hakumaku No Hyoka Gijutsu Handobukku, p.164 - 173, 2013/01
no abstracts in English
Yamaki, Tetsuya
Maku, 36(5), p.240 - 247, 2011/09
This paper reviews the application of our quantum beam-based technology to the development of polymer electrolyte membranes for fuel-cell applications. The 
-ray or electron-beam induced graft polymerization is known to offer a way to prepare membranes. We previously combined this process with the radiation crosslinking method and thus obtained the nove "multiply-crosslinked" membranes, in which both the main and grafted chains have covalently bridged structures leading to a high durability. The approach using heavy ions accelerated to MeV or higher energies is based on the chemical etching and/or modification of each track with diameters of tens to hundreds of nanometers. The resulting "nano-structure controlled" membrane was found to have perfect one-dimensional proton-conductive pathways parallel to its thickness direction. We revealed the hierarchical structures of the membranes, ranging from nanometers to micrometers, by small-angle neutron scattering experiments using a cold or thermal neutron beam. Concludingly, it is important to understand that every quantum beam is different, thereby making the right beam choice.
Ge
alloy layer studied by real-time photoelectron spectroscopyOgawa, Shuichi*; Hozumi, Hideaki*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Kaga, Toshiteru*; Teraoka, Yuden; Takakuwa, Yuji*
Oyo Butsuri Gakkai Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.67 - 70, 2011/01
The oxidation-enhanced Ge atoms condensation kinetics on an SiGe alloy layer has been investigated by the real-time photoemission spectroscopy using the synchrotron radiation. The SiGe alloy layer was formed with a thermal evaporation method on a p-type Si(001) surface, and this alloy layer was oxidized at Langmuir-type adsorption. During oxidation at 773 KC, it is found that the Ge atoms are not oxidized, only SiO film is formed on the SiGe alloy layer. Furthermore, the desorption of GeO molecules does not occur during the oxidation of alloy layer. On the other hand, not only Si atoms but also Ge atoms are oxidized at room temperature. This difference can be explained using the unified oxidation model mediated by the point defect generation, namely it is suggested that a lot of vacancies are generated during oxidation of the SiGe alloy layer at 773K and Ge atoms diffuse through these vacancies.
C alloy layer/Si(001) surface under oxide growth and etching conditionsHozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*
Oyo Butsuri Gakkai Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.181 - 184, 2010/01
The oxidation kinetics on the SiC alloy layer has been investigated using the real-time XPS measurement. Experiments were performed at the BL23SU of SPring-8. The SiC alloy layer was formed with exposing a p-type Si(001) surface to ethylene, and the SiC alloy layer was oxidized at Langmuir-type adsorption (773 K) and 2D oxide island growth (933 K), respectively. In case of Langmuir-type adsorption, it is found that no carbon atoms are oxidized and carbon concentration at the SiO/Si interface increases. These results indicate the carbon atom condensation occurs, leading to the SiO/SiC/Si layers formation. On the other hand, the carbon concentration decrease by 20% in spite of the etching of 38 Si layers in the 2D oxide island growth. Based on these results, it is found that the diffusion of carbon atoms is occurred due to not only oxide growth but also Si etching.
gate dielectricsHosoi, Takuji*; Okamoto, Gaku*; Kutsuki, Katsuhiro*; Kagei, Yusuke*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*
Oyo Butsuri Gakkai Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.145 - 148, 2010/01
We developed high quality high-
/Ge gate stacks with reduced leakage current and superior interface quality, which was fabricated by direct deposition of ZrO on Ge substrate and thermal oxidation. Synchrotron radiation photoelectron spectroscopy revealed that thermal oxidation at 823 K caused not only an intermixing between ZrO and Ge but also the formation of GeO at the interlayer. We obtained an equivalent oxide thickness (EOT) of 1.9 nm, and an interface state density of 10
cm
eV
for Au/ZrO/Ge capacitors. Furthermore, we found that the A10
capping on the Zr0 1ayer is effective for decreasing EOT. The interface state density as low as 5.3
10
cmeV was obtained for the AlO/ZrO/Ge stack with 30 min oxidation. The EOT could be reduced to l.6 nm by 10 min oxidation. The leakage current was two orders of magnitude lower than the conventional poly-Si/SiO/Si stack.
Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Miyamoto, Yu*; Bantaculo, R.*; Suemitsu, Maki*; Enta, Yoshiharu*; Teraoka, Yuden; Yoshigoe, Akitaka; Asaoka, Hidehito; Yamazaki, Tatsuya
Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.207 - 210, 2009/01
The bending of Si substrate has been measured optically in the oxidation of Si(110) surface and variation of curvature for (001) and (-110) directions have been evaluated. Furthermore, time evolutions of oxygen adsorption content and its chemical bonding states have been measured by photoemission spectroscopy to discuss inisotropy of the Si(110) oxidation in comjunction with substrate curvature measurements. Oxygen adsorption content was evaluated from O1s photoemission and chemical bonding states were evaluated from Si2p photoemission. O gas pressure was ranging from 5.010
Pa to 6.710 and substrate temperature was 873 K. Compressive stress was detected in the (-110) direction. In turn, stretching stress was detected. The photoemission spectroscopy indicated that a layer-by-layer oxidation was not took place. The stretching stress in the (001) direction implies that oxidation of B-bonds which have components along the (001) direction takes place.
Asai, Shiho
Maku, 33(2), p.70 - 77, 2008/03
no abstracts in English
Asano, Masaharu; Chen, J.; Maekawa, Yasunari; Yoshida, Masaru
Maku, 33(2), p.63 - 69, 2008/03
no abstracts in English
Sawaki, Kenta*; Asai, Shiho; Watanabe, Kazuo; Sugo, Takanobu*; Saito, Kyoichi*
Maku, 33(1), p.32 - 38, 2008/01
TOPO, tri-n-octylphosphine oxide, as a neutral extractant was impregnated to the hydrophobic group of the polymer chain grafted onto a porous hollow-fiber membrane for an efficient metal-ion collection. A diol group,i.e., adjacent hydroxyl group was introduced into poly-glycidyl methacrylate(GMA) chain grafted onto the porous hollow-fiber membrane via the epoxy-ring-opening reaction with water, followed by a reaction of the remaining epoxy group with octadecanethiol (C
H
SH) to form an octadecanethiol group. The diol group reduced the amount of TOPO coagulatedon the graft chain, whereas the interaction of the octadecanethiol group of the graft chain with the hydrophobic part of TOPO enabled the impregnation of TOPO to the graft chain. A 1 mmol-Bi/L bismuth chloride solution was forced to permeate through the pores of the TOPO-impregnated porous hollow-fiber membrane with a density of TOPO impregnated of 1.3 mol/kg of the GMA-grafted porous hollow-fiber membrane and the pure water flux of 0.7 m/h at 0.1 MPa and 298 K. The equilibrium binding capacity of the membrane for bismuth ions was 0.22 mol/kg of the TOPO-impregnated porous hollow-fiber membrane, which was equivalent to a binding ratio of bismuth ion to impregnated TOPO of 1.0.
Asai, Shiho; Watanabe, Kazuo; Sugo, Takanobu*; Saito, Kyoichi*
Maku, 32(3), p.168 - 174, 2007/05
no abstracts in English
Sawaki, Kenta*; Domon, Sayaka*; Asai, Shiho; Watanabe, Kazuo; Sugo, Takanobu*; Saito, Kyoichi*
Maku, 32(2), p.109 - 115, 2007/03
no abstracts in English
Takeda, Masayasu
Oyo Butsuri Gakkai Umoreta Kaimen No X-Sen, Chuseishi Kaiseki Gurupu Dai-1-Kai Koshukai "X-Sen Hansharitsuho Niyoru Hakumaku, Tasomaku No Kaiseki" Tekisuto; X-Sen Hansharitsuho Nyumon, p.58 - 77, 2007/00
X-ray and neutron reflectometries have been now widely used to determine the depth profile of thin films and artificial multilayers. These two techniques give similar information on the internal layered structures. As compared with X-ray, neutron has several advantages: (1) Most materials are transparent for neutrons, (2) The nuclear scattering length (scattering power) for neutrons is different even for adjacent elements in the periodic table, (3) Neutrons are sensitive to the difference of isotopes, (4) Neutrons have the interaction between their spin and the magnetic moments in the materials. In this chapter, a brief introduction of the neutron reflectometry is given as compared with the X-ray reflectometry.
moleculesTeraoka, Yuden; Yoshigoe, Akitaka
Goku Usu Shirikon Sankamaku No Keisei, Hyoka, Shinraisei Dai-6-Kai Kenkyukai Hobunshu, p.259 - 264, 2001/00
no abstracts in English
Onuki, Kaoru; Hwang, G.; Shimizu, Saburo
Maku Shimpojium '99 Hobunshu, (11), p.37 - 40, 1999/00
no abstracts in English
Sugo, Takanobu
Ion Koukan Maku No Kogyoteki Oyo, Dai-2-Shu, p.271 - 278, 1993/00
no abstracts in English
Asano, Masaharu; Yoshida, Masaru; Omichi, Hideki; Yamanaka, Hidetoshi*
Maku, 17(4), p.216 - 227, 1992/07
no abstracts in English
